analog power AM4890N dual n-channel 150-v (d-s) mosfet v ds (v) i d (a) 1.4 1.1 symbol limit units v ds 150 v gs 20 t a =25c 1.4 t a =70c 1.1 i dm 10 i s 2.6 a t a =25c 2.1 t a =70c 1.3 t j , t stg -55 to 150 c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature absolute maximum ratings (t a = 25c unless otherwise noted) parameter drain-source voltage v gate-source voltage product summary r ds(on) () 150 0.7 @ v gs = 10v 1.2 @ v gs = 5.5v operating junction and storage temperature range thermal resistance ratings parameter maximum junction-to-ambient a t <= 10 sec r ja c/w steady state i d a pulsed drain current b continuous source current (diode conduction) a power dissipation a p d w continuous drain current a key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? poe power sourcing equipment ? poe powered devices ? telecom dc/dc converters ? white led boost converters ? preliminary 1 publication order number: ds_AM4890N_1a
analog power AM4890N parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 120 v, v gs = 0 v 1 v ds = 120 v, v gs = 0 v, t j = 55c 10 on-state drain current i d(on) v ds = 5 v, v gs = 10 v 0.5 a v gs = 10 v, i d = 1.2 a 0.7 v gs = 4.5 v, i d = 1.1 a 1.2 forward transconductance g fs v ds = 15 v, i d = 1.2 a 11 s diode forward voltage v sd i s = 1.3 a, v gs = 0 v 0.8 v total gate charge q g 3.7 gate-source charge q gs 1.3 gate-drain charge q gd 1.8 turn-on delay time t d(on) 5 rise time t r 10 turn-off delay time t d(off) 16 fall-time t f 8 input capacitance c iss 347 output capacitance c oss 37 reverse transfer capacitance c rss 20 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. ns v ds = 75 v, v gs = 4.5 v, i d = 1.2 a dynamic zero gate voltage drain current static ua r ds(on) i dss nc v dd = 75 v, r l = 62.5 , i d = 1.2 a, v gen = 10 v, r gen = 6 v ds = 15 v, v gs = 0 v, f =1 mhz drain-source on-resistance analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. typical parameters which may be provided in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buyer shall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. pf ? preliminary 2 publication order number: ds_AM4890N_1a
analog power AM4890N 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1 2 3 rds(on) - on - resistance ( ) id - drain current (a) 3.5v 4.5v,6v,8v,10v 0 0.5 1 1.5 2 2.5 3 0 1 2 3 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5v 3.5v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 2 4 6 8 10 rds(on) - on - resistance ( ) vgs - gate - to - source voltage (v) tj = 25 c i d = 1.2 a 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz ? preliminary 3 publication order number: ds_AM4890N_1a
analog power AM4890N 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient typical electrical characteristics 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 vgs - gate - to - source voltage (v) qg - total gate charge (nc) i d = 1.2 a v ds = 75v 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance ( ) (normalized) tj - junction temperature ( c) 0 5 10 15 20 25 30 35 40 45 50 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja r ja = 110 c /w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 d = 0.5 0.2 0.1 0.05 0.02 single pulse p( pk ) t 1 t 2 ? preliminary 4 publication order number: ds_AM4890N_1a
analog power AM4890N package information note: 1. all dimension are in mm. 2. package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 3. package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. the package top may be smaller than the package bottom. 5. dimension "b" does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of "b" dimension at maximum material condition. the dambar cannot be located on the lower radius of the foot. ? preliminary 5 publication order number: ds_AM4890N_1a
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